A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates

Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C inclusions were generated both at the interface between the substrate and epitaxial layer, and during...

Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates

Properties of epitaxial graphene grown on C-face SiC compared to Si-face

4H-SiC Epitaxial Layers Grown on on-axis Si-face Substrate

We report on the growth of 4H-SiC epitaxial layer on Si-face polished nominally on-axis 2” full wafer, using Hot-Wall CVD epitaxy. The polytype stability has been maintained over the larger part of the wafer, but 3C inclusions have not been possible to avoid. Special attention has given to the mechanism of generation and propagation of 3C polytype in 4H-SiC epilayer. Different optical and struc...

Stacking of adjacent graphene layers grown on C-face SiC